Leading-edge metallization schemes inherently involve the introduction of novel metal systems and novel dielectric materials. Technological advances highlighted during AMC 2002 include the latest developments in integrating copper-based metallization with low-dielectric constant materials and in evaluating the reliability of such interconnects. For the second consecutive year, the volume takes a special look at the status of vertical integration, or 3D chips, and the promise it holds for high-density functional integration and heterogeneous integration. Technical leaders from around the world come together in this volume, the 18th in a popular series from the Materials Research Society, to offers a comprehensive overview of the current state of advanced metallization science and technologies. Topics include: advanced interconnects, 3D integration and packaging; CMP; reliability, test and characterization; metallization; integration; low-k/dielectric materials and characterization; atomic layer deposition (ALD) and barriers.Figure 1 shows a schematic of a test vehicle for our approach to high density multifunctional integration (HDMI) based upon wafer-scale 3D interconnection [3, 8]. ... The wafer bonding is conducted in a vacuum chamber of an EV Group (EVG ) 501 bonder at 3rd Level [Thinned ... (s 1 um accuracy) Thin glue-layer bonding at low temperature (S 400 AdC) 1st Level leveling of lop alt;s 10 um thick) * Inter- waferanbsp;...
|Title||:||Advanced Metallization Conference 2002 (AMC 2002):|
|Author||:||B. M. Melnick, T. S. Cale, S. Zaima, T. Ohta|
|Publisher||:||Materials Research Society - 2003-01-01|