Advances in Imaging and Electron Physics merges two long-running serials-Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.(1989) used a hybrid model, which divides the internal SEs into fast and slow electrons, according to their initial energy. ... They presented the lateral distribution for copper and alumina in the 0a10 nm range and in the radial distribution in the 0a0.5 nm range. ... It can be concluded that when the multiplication cascades are also included, a sharper SE spatial distribution is obtained. ... The slow electrons are not very important, because they cannot travel far from the incidence point.
|Title||:||Advances in Imaging and Electron Physics|
|Author||:||Peter W. Hawkes|
|Publisher||:||Academic Press - 2011-07-29|