Electrostatic Discharge (ESD), an event of a sudden transfer of electrons between two bodies at different potentials, happens commonly throughout nature. When such even occurs on integrated circuits (ICs), ICs will be damaged and failures result. As the evolution of semiconductor technologies, increasing usage of automated equipments and the emerging of more and more complex circuit applications, ICs are more sensitive to ESD strikes. Main ESD events occurring in semiconductor industry have been standardized as human body model (HBM), machine model (MM), charged device model (CDM) and international electrotechnical commission model (IEC) for control, monitor and test. In additional to the environmental control of ESD events during manufacturing, shipping and assembly, incorporating on-chip ESD protection circuits inside ICs is another effective solution to reduce the ESD-induced damage. This dissertation presents design, characterization, integration and compact modeling of novel silicon controlled rectifier (SCR)-based devices for on-chip ESD protection.Introduction In Chapter 4, we have already discussed how important to build a predictable compact model for SCR ... The question is what kind of model should be used for the PNP and NPN transistors in SCR subcircuit model to make theanbsp;...
|Title||:||Design, Characterization and Compact Modeling of Novel Silicon Controlled Rectifier (SCR)-based Devices for Electrostatic Discharge (ESD) Protection Applications in Integrated Circuits|
|Publisher||:||ProQuest - 2008|