Emerging Lithographic Technologies III

Emerging Lithographic Technologies III

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Nested and isolated lines can be printed without bias at 10 um gap if the isolated features on the X-ray mask are biased by -25 nm. ... Jerome Silvemran from IBM T. J. Watson Research Center and Franco Cerrina from University of Wisconsin- Madison ... Jerome Silverman, aquot;X-Ray Lithography: Status, Challenges and Outlook for 0.l3umaquot;, Joumal of Vacuum Science and Technology, Bl5(6), 2117 ( 1997) 3.

Title:Emerging Lithographic Technologies III
Author:Society of Photo-Optical Instrumentation Engineers
Publisher: - 1999-06-01


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