The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.The equivalent circuit element values Cs and Rs of the series circuit and Cp and Rp of the parallel circuit can be related to the elemental ... In addition, there can be other losses in the system that can be resistive in nature and also those that can present additional phase shift to the ac ... One such source of loss would be presented by interface states and traps. ... CaV measurements in the parallel mode of Figure 2.13b , although series mode could also be used to some advantage.
|Title||:||Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides|
|Publisher||:||John Wiley & Sons - 2009-07-30|