Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.This can be attributed to localized near-surface melting, in which the melt front did not extend into the underlying crystal. Figs. 2d and 2e ... The entire melting and recrystallization process occurs in a time of less than 100 nsec. Details of suchanbsp;...
|Title||:||Ion Implantation and Beam Processing|
|Author||:||J. S. Williams, J. M. Poate|
|Publisher||:||Academic Press - 2014-06-28|