When you see a nicely presented set of data, the natural response is: aHow did they do that; what tricks did they use; and how can I do that for myself?a Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.18th Int. Conf. on Noise and Fluctuations, Canary Islands (Spain), 2004. ... User Manual, 2002. www.xmod-tech.com. ... Compact Modeling Workshop at the International NanoTech Meeting, Boston, MA, Vol. ... See www.tiburon-da.com.
|Title||:||Measurement and Modeling of Silicon Heterostructure Devices|
|Author||:||John D. Cressler|
|Publisher||:||CRC Press - 2007-12-13|