DI! ill I07 i: Ulll OI I01 Q ~ a#39;la#39;nl:itlo1 Pullup and Illllown WI I 6-75 Ill , Ua#39; aquot; 3-03 aquot; 0 lime: an anally of the rpd - 0.5177 ls we - 0.305 as some order. ... Table 5: a comparison between CMOS, nMOS and SOS n-channel JFET Qa, a#39; a#39;OI I-JPIT mrsnra#39; Jrrr Ad Pwiv=vda#39; aquot;R aquot;D PWaquot; ... 2.9ra+r6 /cm3, r.E=r.D= 4.5 pm wE- 20s tun, wD- 26 tun, BE = 0.143 um, an-= 0.255 ... Particularly where radiation hardness is required, they are advantageous. ...  SPlCE 3b.l Usera#39;s Manual  A. E. Parkerand D. .1 .
|Title||:||Proceedings of the 34th Midwest Symposium on Circuits and Systems|
|Author||:||Naval Postgraduate School (U.S.). Dept. of Electrical and Computer Engineering, IEEE Circuits and Systems Society|