Advanced semiconductor technology is depending on innovation and less on qclassicalq scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.Standford University, whose contributions to Ge device processing have been presented in a paper at this symposium , and he has also ... Finally, and as a by-product of the spectroscopic studies, we have refined an energy level diagram of band edge states, and ... G. Lucovsky, J. Molecular Structure 838, 187 (2007).
|Title||:||SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices|
|Publisher||:||The Electrochemical Society - 2008|