Silicide Technology for Integrated Circuits focuses on the task of developing and applying metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages and provides guidance on the application of the latest emerging technology. The book begins with an overview of silicide technology and moves on to provide the fundamentals of silicide formation, including various processing methods. Topics such as the optical emission properties of Fe silicide and their importance for Si-based optoelectronics are discussed, along with Si-Ge and SOI, which represent two possible substrate frames for the next-generation of Si-based device technology. This invaluable publication also provides comprehensive coverage of the characterisation methods used in silicide technology.... surface reconstruction (image area: 1600 A x 1600 A, T = 575 K, Ge coverage: 1.26 A). Adapted from Reference 19. the layer. A recent photoemission spectroscopy study used polarised synchrotron. 177 Silicide contacts for Si/Ge devices.
|Title||:||Silicide Technology for Integrated Circuits (Processing)|
|Author||:||Lih J. Chen, Institution of Electrical Engineers|
|Publisher||:||IET - 2004-01-01|