This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.Sentaurus Usera#39;s Manual, Synopsys, Inc., Mountain View, CA, v. 2009.6. 12. ... 2008. 16. Z. H. Liu, et al., aThreshold voltage model for deep-submicrometer MOSFETs, a IEEE Transactions on Electron Devices, vol.40, no.1, pp.86-95, Jan. 1993.
|Title||:||Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11|
|Author||:||R. Ekwal Sah|
|Publisher||:||The Electrochemical Society - 2011-04|