This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5a7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices. SEQUOIA Device Designer Usersa#39; Guide, SEQUOIA Design Systems, 1998- 2001  S. Beebe, Simulation of Complete CMOS I/O Circuit Response to CDM Stress, ESD/EOS 1998, pp. 259-270.  M. Mergens, et al., ESD-level Circuitanbsp;...
|Title||:||Simulation of Semiconductor Processes and Devices 2001|
|Author||:||Dimitris Tsoukalas, Christos Tsamis|
|Publisher||:||Springer Science & Business Media - 2012-12-06|