The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.42 T. Skotnicki, a#39;MASTAR Manual, ver. 4a#39;, 2005. ... 48 J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva, and J. E. Carceller, a#39;A Monte Carlo study on the electron- transport properties of highperformance strained-Si on relaxed ... 1612a1618, 2001.
|Title||:||TCAD for Si, SiGe and GaAs Integrated Circuits|
|Author||:||G.A. Armstrong, C.K. Maiti|
|Publisher||:||IET - 2007-01-01|